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IHW30N120R2

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IHW30N120R2

IGBT 1200V 60A 390W TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IHW30N120R2 is an NPT, Trench Field Stop Insulated Gate Bipolar Transistor. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) rating of 60 A, with a pulsed collector current (Icm) of 90 A. The device offers a maximum power dissipation of 390 W and a collector-emitter saturation voltage (Vce(on)) of 1.8 V at 15 V gate-emitter voltage and 30 A collector current. Typical switching characteristics include a turn-off delay (Td(off)) of 792 ns at 25°C. The IHW30N120R2 utilizes a standard input type and is housed in a PG-TO247-3-1 package for through-hole mounting. Applications for this device include power factor correction, uninterruptible power supplies, and motor drives, operating within a temperature range of -40°C to 175°C.

Additional Information

Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Supplier Device PackagePG-TO247-3-1
IGBT TypeNPT, Trench Field Stop
Td (on/off) @ 25°C-/792ns
Switching Energy3.1mJ
Test Condition600V, 30A, 28Ohm, 15V
Gate Charge198 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)90 A
Power - Max390 W

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