IHW30N110R3FKSA1
IGBT TRENCH 1100V 60A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IHW30N110R3FKSA1 is a Trench Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1100 V and a continuous collector current rating of 60 A, with a pulsed current capability of 90 A. The device offers a maximum power dissipation of 333 W and a low on-state voltage (Vce(on)) of 1.75 V at the specified test conditions (600 V, 30 A, 15 Ohm, 15 V). Gate charge is specified at 180 nC. The IHW30N110R3FKSA1 is housed in a PG-TO247-3-1 package for through-hole mounting. Operating temperature ranges from -40°C to 175°C (TJ). This IGBT is suitable for use in power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 30A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | -/350ns |
| Switching Energy | 1.15mJ (off) |
| Test Condition | 600V, 30A, 15Ohm, 15V |
| Gate Charge | 180 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1100 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 333 W |
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