IHW30N100R
IGBT 1000V 60A 412W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies IHW30N100R is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter voltage of 1000V and a continuous collector current of 60A, with a pulsed current capability of 90A. Its maximum power dissipation is rated at 412W. The IGBT type is Trench Field Stop, offering efficient switching characteristics with a typical switching energy of 2.1mJ (off) under test conditions of 600V, 30A, 26Ohm, and 15V gate drive. The on-state voltage drop (Vce(on)) is 1.7V at 15V gate-emitter voltage and 30A collector current. The device has a gate charge of 209 nC and a turn-off delay (td(off)) of 846ns at 25°C. Operating temperature ranges from -40°C to 175°C (TJ). The Infineon Technologies IHW30N100R is provided in a PG-TO247-3-1 package for through-hole mounting and is supplied in tubes. This IGBT is widely utilized in industrial automation, motor control, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/846ns |
| Switching Energy | 2.1mJ (off) |
| Test Condition | 600V, 30A, 26Ohm, 15V |
| Gate Charge | 209 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 412 W |
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