IHW25N120R2FKSA1
IGBT 1200V 50A 365W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IHW25N120R2FKSA1 is a NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 50 A, with a pulsed current rating of 75 A. The device offers a maximum power dissipation of 365 W. Key electrical characteristics include a gate charge of 60.7 nC and a typical on-state voltage (Vce(on)) of 1.8V at 25A and 15V Vge. Switching characteristics are specified with a turn-off delay (td(off)) of 324 ns at 25°C under test conditions of 600V, 25A, 10 Ohm, and 15V. The IHW25N120R2FKSA1 is housed in a PG-TO247-3-1 package for through-hole mounting and operates across an extended temperature range of -40°C to 175°C (TJ). This IGBT is commonly utilized in power factor correction, industrial motor drives, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 25A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | -/324ns |
| Switching Energy | 1.59mJ |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 60.7 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 365 W |
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