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IHW20T120FKSA1

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IHW20T120FKSA1

IGBT 1200V 40A 178W TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IHW20T120FKSA1 is a 1200V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Featuring a Trench Field Stop architecture, this device offers optimized switching characteristics with a typical Vce(on) of 2.2V at 15V and 20A. The IHW20T120FKSA1 boasts a collector current capability of 40A continuous and 60A pulsed, with a maximum power dissipation of 178W. Key parameters include a gate charge of 120 nC and a reverse recovery time of 140 ns, facilitating efficient operation. This component is supplied in a PG-TO247-3-1 package for through-hole mounting, operating within a temperature range of -40°C to 150°C (TJ). Its performance profile makes it suitable for use in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)140 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
Supplier Device PackagePG-TO247-3-1
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C50ns/560ns
Switching Energy1.8mJ (on), 1.5mJ (off)
Test Condition600V, 20A, 28Ohm, 15V
Gate Charge120 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)60 A
Power - Max178 W

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