IHW20N135R3FKSA1
IGBT 1350V 20A 310W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGBT IHW20N135R3FKSA1 is a high-performance Insulated Gate Bipolar Transistor designed for demanding power applications. This device features a 1350V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 60A. The IHW20N135R3FKSA1 utilizes trench gate technology for enhanced performance characteristics, including low on-state voltage (Vce(on) of 1.8V at 15V, 20A) and efficient switching with a typical turn-off delay of 335ns. With a maximum power dissipation of 310W and a low switching energy of 1.3mJ (off), this IGBT is suitable for use in motor drives, industrial power supplies, and renewable energy systems. It is supplied in a PG-TO247-3-1 package for through-hole mounting, with an operating temperature range of -40°C to 175°C.
Additional Information
Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | -/335ns |
| Switching Energy | 1.3mJ (off) |
| Test Condition | 600V, 20A, 15Ohm, 15V |
| Gate Charge | 195 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 310 W |
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