IHW20N120R3FKSA1
IGBT 1200V 40A 310W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGBT, part number IHW20N120R3FKSA1, is a high-performance insulated gate bipolar transistor designed for demanding applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 60 A. Its Trench IGBT architecture ensures low on-state voltage (Vce(on) of 1.7V at 15V, 20A) and efficient switching characteristics, with a specified switching energy of 950 µJ (off) under test conditions of 600 V, 20 A, 15 Ohm, 15 V. The device offers a maximum power dissipation of 310 W and operates across a wide temperature range of -40°C to 175°C (TJ). Packaged in a PG-TO247-3-1 through-hole configuration, this IGBT is suitable for use in power supplies, motor drives, and industrial automation systems.
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 20A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | -/387ns |
| Switching Energy | 950µJ (off) |
| Test Condition | 600V, 20A, 15Ohm, 15V |
| Gate Charge | 211 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 310 W |
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