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IHW20N120R2

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IHW20N120R2

IGBT 1200V 40A 330W TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies TrenchStop® IGBT, part number IHW20N120R2, is a high-performance NPT Trench Field Stop Insulated Gate Bipolar Transistor. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 60 A. It offers a low on-state voltage of 1.75 V at 15 V gate-emitter voltage and 20 A collector current, and a maximum power dissipation of 330 W. The device exhibits a gate charge of 143 nC and switching characteristics including a turn-off delay of 359 ns at 25°C. Packaged in a PG-TO247-3-1 (TO-247-3) through-hole configuration, the IHW20N120R2 operates across a temperature range of -40°C to 175°C. This IGBT is suitable for applications in power factor correction, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 20A
Supplier Device PackagePG-TO247-3-1
IGBT TypeNPT, Trench Field Stop
Td (on/off) @ 25°C-/359ns
Switching Energy1.2mJ (off)
Test Condition600V, 20A, 15Ohm, 15V
Gate Charge143 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)60 A
Power - Max330 W

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