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IHW15T120FKSA1

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IHW15T120FKSA1

IGBT 1200V 30A 113W TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop® IGBT IHW15T120FKSA1 is a Trench Field Stop Insulated Gate Bipolar Transistor designed for high-voltage applications. This component features a collector-emitter voltage of 1200 V and a continuous collector current capability of 30 A, with a pulsed current rating of 45 A. The maximum power dissipation is 113 W. Key electrical characteristics include a gate charge of 85 nC and a Vce(on) of 2.2 V at 15 V gate-emitter voltage and 15 A collector current. Reverse recovery time is specified at 140 ns, with typical turn-on and turn-off delays of 50 ns and 520 ns respectively, tested at 600 V, 15 A, 56 Ohm, and 15 V. Switching energy is rated at 2.7 mJ. The device is housed in a PG-TO247-3-1 package suitable for through-hole mounting and operates within a temperature range of -40°C to 150°C. This IGBT is commonly utilized in power factor correction (PFC) circuits, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: TrenchStop®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)140 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Supplier Device PackagePG-TO247-3-1
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C50ns/520ns
Switching Energy2.7mJ
Test Condition600V, 15A, 56Ohm, 15V
Gate Charge85 nC
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)45 A
Power - Max113 W

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