IHW15N120R2
IGBT 1200V 30A 357W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IHW15N120R2 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a collector-emitter voltage of 1200 V and a continuous collector current of 30 A, with a pulsed capability of 45 A. The IHW15N120R2 offers a maximum power dissipation of 357 W and a low on-state voltage of 1.75 V at 15V and 15A, ensuring efficient power transfer. With a gate charge of 133 nC and switching times (off) specified at 282 ns, it is suitable for demanding switching applications. The IGBT is housed in a PG-TO247-3-1 package, allowing for through-hole mounting and operation across a wide temperature range of -40°C to 175°C. Applications include industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 15A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/282ns |
| Switching Energy | 900µJ (off) |
| Test Condition | 600V, 15A, 14.8Ohm, 15V |
| Gate Charge | 133 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 357 W |
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