IGZ75N65H5XKSA1
IGBT TRENCH 650V 119A TO247-4Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ 5 series IGZ75N65H5XKSA1 is a 650V Insulated Gate Bipolar Transistor (IGBT) with a continuous collector current rating of 119A and a pulsed collector current of 300A. This device features a trench IGBT architecture, providing optimized performance for demanding applications. The collector-emitter saturation voltage (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 75A collector current. With a maximum power dissipation of 395W and an operating junction temperature range of -40°C to 175°C, it is suitable for high-power switching. Key switching characteristics include a gate charge of 166 nC and switching energies of 680µJ (on) and 430µJ (off) under test conditions of 400V, 37.5A, 10 Ohm, and 15V. The component is housed in a PG-TO247-4 package, designed for through-hole mounting. This IGBT is commonly utilized in industrial power supplies, motor drives, and power factor correction circuits.
Additional Information
Series: TrenchStop™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Supplier Device Package | PG-TO247-4 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 26ns/347ns |
| Switching Energy | 680µJ (on), 430µJ (off) |
| Test Condition | 400V, 37.5A, 10Ohm, 15V |
| Gate Charge | 166 nC |
| Current - Collector (Ic) (Max) | 119 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 395 W |
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