IGZ50N65H5XKSA1
IGBT TRENCH 650V 85A TO247-4Manufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies IGZ50N65H5XKSA1 is a TrenchStop™ 5 series Insulated Gate Bipolar Transistor (IGBT). This component features a 650 V collector-emitter breakdown voltage and a continuous collector current of 85 A, with a pulsed capability of 200 A. Designed for demanding applications, it offers a maximum power dissipation of 273 W and a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate voltage and 50 A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 20 ns and turn-off delay (Td(off)) of 250 ns at 25°C, with switching energy figures of 410 µJ (on) and 190 µJ (off). The IGBT is housed in a PG-TO247-4 package, facilitating through-hole mounting. Operating temperature range is from -40°C to 175°C (TJ). This device is utilized across various industries including industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: TrenchStop™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | PG-TO247-4 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 20ns/250ns |
| Switching Energy | 410µJ (on), 190µJ (off) |
| Test Condition | 400V, 25A, 12Ohm, 15V |
| Gate Charge | 109 nC |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 273 W |
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