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IGW60T120FKSA1

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IGW60T120FKSA1

IGBT TRENCH 1200V 100A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

The Infineon Technologies TrenchStop® IGBT, part number IGW60T120FKSA1, is a Trench Field Stop Insulated Gate Bipolar Transistor designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) of 100 A, with a pulsed capability (Icm) of 150 A. The IGBT type is Trench Field Stop, offering optimized switching characteristics with a typical turn-on delay (Td(on)) of 50 ns and turn-off delay (Td(off)) of 480 ns at 25°C. It has a maximum power dissipation of 375 W and a gate charge of 280 nC. The collector-emitter on-voltage (Vce(on)) is specified at 2.4 V maximum under a gate-emitter voltage (Vge) of 15 V and collector current (Ic) of 60 A, with switching energy noted at 9.5 mJ. The IGW60T120FKSA1 is housed in a PG-TO247-3-1 package for through-hole mounting and operates within an ambient temperature range of -40°C to 150°C. This device is suitable for use in industrial power supplies, motor control, and uninterruptible power systems.

Additional Information

Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 60A
Supplier Device PackagePG-TO247-3-1
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C50ns/480ns
Switching Energy9.5mJ
Test Condition600V, 60A, 10Ohm, 15V
Gate Charge280 nC
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)150 A
Power - Max375 W

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