IGW50N65H5AXKSA1
IGBT TRENCH 650V 80A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IGBT, part number IGW50N65H5AXKSA1, is a high-performance discrete power transistor designed for demanding applications. This Trench IGBT features a collector-emitter breakdown voltage of 650 V and a continuous collector current capability of 80 A, with a pulsed collector current of 150 A. The low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 50 A collector current, coupled with switching energies of 450 µJ (on) and 160 µJ (off) at the specified test conditions, ensures efficient operation. Its robust construction includes a maximum power dissipation of 270 W and an operating temperature range of -40°C to 175°C. The device is packaged in a PG-TO247-3 through-hole configuration and is qualified to AEC-Q101, making it suitable for automotive and industrial power conversion systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | PG-TO247-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 21ns/173ns |
| Switching Energy | 450µJ (on), 160µJ (off) |
| Test Condition | 400V, 25A, 12Ohm, 15V |
| Gate Charge | 116 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 270 W |
| Qualification | AEC-Q101 |
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