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IGW50N65F5AXKSA1

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IGW50N65F5AXKSA1

IGBT 650V TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop™ IGBT, part number IGW50N65F5AXKSA1, offers a 650V collector-emitter breakdown voltage. This device features a continuous collector current capability of 80A (Ic) and a pulsed collector current of 150A (Icm). The Trench IGBT design ensures efficient switching with specified turn-on delay (Td(on)) of 21ns and turn-off delay (Td(off)) of 156ns at 25°C, tested under 400V, 25A, 12 Ohm, 15V conditions. Its on-state voltage drop (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 50A collector current. The component has a maximum power dissipation of 270W and a gate charge of 108 nC. Housed in a PG-TO247-3 package for through-hole mounting, this AEC-Q101 qualified component operates across an extended temperature range of -40°C to 175°C (TJ). The IGW50N65F5AXKSA1 is commonly utilized in automotive applications requiring robust power switching.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Supplier Device PackagePG-TO247-3
IGBT TypeTrench
Td (on/off) @ 25°C21ns/156ns
Switching Energy490µJ (on), 140µJ (off)
Test Condition400V, 25A, 12Ohm, 15V
Gate Charge108 nC
GradeAutomotive
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)150 A
Power - Max270 W
QualificationAEC-Q101

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