IGW50N60TPXKSA1
IGBT TRENCH/FS 600V 80A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies TrenchStop™ IGW50N60TPXKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This Trench Field Stop IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed capability of 150A. It offers a maximum power dissipation of 319.2W and a low on-state voltage of 1.8V at 15V gate-emitter voltage and 50A collector current. Typical switching characteristics include gate charge of 249 nC and switching energy of 1.53mJ (turn-on) and 850µJ (turn-off) under specified test conditions. The device operates within an extended temperature range of -40°C to 175°C and is provided in a PG-TO247-3 package suitable for through-hole mounting. This component is widely utilized in industrial power control, motor drives, and power factor correction circuits.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | PG-TO247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 20ns/215ns |
| Switching Energy | 1.53mJ (on), 850µJ (off) |
| Test Condition | 400V, 50A, 7Ohm, 15V |
| Gate Charge | 249 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 319.2 W |
Request a Quote
Clients Also Buy
IKQ120N60TXKSA1
IGBT TRENCH FS 600V 160A TO247-3
AIKW50N60CTXKSA1
IC DISCRETE 600V TO247-3
IKQ75N120CS6XKSA1
IGBT TRENCH FS 1200V 150A TO247
