IGW40T120FKSA1
IGBT NPT FS 1200V 75A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGBT NPT FS IGW40T120FKSA1 is a high-performance Insulated Gate Bipolar Transistor designed for demanding applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current of 75A, with a pulsed capability of 105A. The Trench Field Stop technology ensures low switching losses, with a typical switching energy of 6.5mJ at 600V, 40A, and 15 Ohm. Its on-state voltage (Vce(on)) is 2.3V at 15V Vge and 40A Ic. The standard input type and a gate charge of 203 nC facilitate straightforward driving. With a maximum power dissipation of 270W and an operating temperature range of -40°C to 150°C (TJ), this IGBT is suitable for robust power conversion systems. The IGW40T120FKSA1 is presented in the TO-247-3 package, ideal for through-hole mounting. Applications include motor drives, power supplies, and industrial automation.
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 48ns/480ns |
| Switching Energy | 6.5mJ |
| Test Condition | 600V, 40A, 15Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 270 W |
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