IGW40N65H5AXKSA1
IGBT TRENCH 650V 74A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IGBT IGW40N65H5AXKSA1 is a high-performance insulated gate bipolar transistor designed for demanding applications. This device features a 650 V collector-emitter breakdown voltage and a continuous collector current capability of 74 A, with a pulsed current capability of 120 A. Optimized for fast switching, it exhibits switching energies of 360µJ on and 110µJ off at 400V, 20A, 15 Ohm, 15V. The TrenchStop™ IGBT technology ensures low on-state voltage of 2.1V at 15V gate-emitter voltage and 40A collector current. With a maximum power dissipation of 250 W and an operating temperature range of -40°C to 175°C, it is suitable for automotive and industrial power conversion systems. The component is supplied in a PG-TO247-3 package for through-hole mounting.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | PG-TO247-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 20ns/149ns |
| Switching Energy | 360µJ (on), 110µJ (off) |
| Test Condition | 400V, 20A, 15Ohm, 15V |
| Gate Charge | 92 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 74 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 250 W |
| Qualification | AEC-Q101 |
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