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IGW30N60TPXKSA1

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IGW30N60TPXKSA1

IGBT TRENCH/FS 600V 53A TO247-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies TrenchStop™ IGBT IGW30N60TPXKSA1 is a 600V Field Stop Insulated Gate Bipolar Transistor. This component features a collector current of 53A (90A pulsed) and a maximum power dissipation of 200W. The Vce(on) is specified at 1.8V with a gate drive of 15V and collector current of 30A. Key switching characteristics include a gate charge of 130 nC, with turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 179ns at 25°C, under test conditions of 400V, 30A, 10.5 Ohm, and 15V. Switching energy is rated at 710µJ (on) and 420µJ (off). The IGW30N60TPXKSA1 is housed in a PG-TO247-3 package for through-hole mounting and operates across a temperature range of -40°C to 175°C. This device is suitable for applications in industrial power conversion and motor control.

Additional Information

Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Supplier Device PackagePG-TO247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C15ns/179ns
Switching Energy710µJ (on), 420µJ (off)
Test Condition400V, 30A, 10.5Ohm, 15V
Gate Charge130 nC
Current - Collector (Ic) (Max)53 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)90 A
Power - Max200 W

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