IGW25T120FKSA1
IGBT NPT FS 1200V 50A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGW25T120FKSA1 is an NPT, Trench Field Stop Insulated Gate Bipolar Transistor designed for demanding applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 50 A. The IGW25T120FKSA1 features a maximum power dissipation of 190 W and a low on-state voltage of 2.2V at 15V, 25A, ensuring efficient operation. With a switching energy of 4.2mJ and typical turn-on/turn-off times of 50ns/560ns respectively, it is suitable for power conversion and motor control applications in industries such as industrial automation and renewable energy. The device is housed in a PG-TO247-3-1 package for through-hole mounting.
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 25A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 50ns/560ns |
| Switching Energy | 4.2mJ |
| Test Condition | 600V, 25A, 22Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 190 W |
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