IGW15T120FKSA1
IGBT 1200V 30A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGBT IGW15T120FKSA1 is a High Voltage NPT, Trench Field Stop Insulated Gate Bipolar Transistor. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 30 A, with a pulsed capability of 45 A. The IGBT type utilizes Trench Field Stop technology for optimized switching performance, characterized by a switching energy of 2.7 mJ and typical turn-on/turn-off times of 50 ns/520 ns at 25°C. The on-state voltage drop (Vce(on)) is a maximum of 2.2 V at 15V gate-emitter voltage and 15A collector current. Designed for through-hole mounting, it is supplied in the PG-TO247-3-1 package. This device is suitable for applications in industrial power supplies and motor drives. The maximum power dissipation is 110 W, and it operates within a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 50ns/520ns |
| Switching Energy | 2.7mJ |
| Test Condition | 600V, 15A, 56Ohm, 15V |
| Gate Charge | 85 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 110 W |
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