IGW08T120FKSA1
IGBT NPT FS 1200V 16A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop® IGW08T120FKSA1 is an NPT, Trench Field Stop Insulated Gate Bipolar Transistor. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) capability of 16 A. It offers a maximum power dissipation of 70 W and a pulsed collector current (Icm) of 24 A. The IGW08T120FKSA1 has a gate charge of 53 nC and a typical on-state voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 8 A collector current. Switching characteristics include turn-on delay (Td(on)) of 40 ns and turn-off delay (Td(off)) of 450 ns at 25°C, with a switching energy of 1.37 mJ under test conditions of 600 V, 8 A, 81 Ohm, and 15 V. Designed for through-hole mounting, it is supplied in a PG-TO247-3-1 package. This IGBT is suitable for applications in industrial motor drives and power factor correction where high voltage and current handling are required.
Additional Information
Series: TrenchStop®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 8A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 40ns/450ns |
| Switching Energy | 1.37mJ |
| Test Condition | 600V, 8A, 81Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 24 A |
| Power - Max | 70 W |
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