IGW03N120H2FKSA1
IGBT 1200V 9.6A 62.5W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGW03N120H2FKSA1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 9.6A, with a pulsed capability of 9.9A. The device dissipates up to 62.5W and exhibits a low on-state voltage of 2.8V at 15V gate-emitter voltage and 3A collector current. Switching characteristics include a typical gate charge of 22nC and turn-on/turn-off delays of 9.2ns/281ns at 25°C under test conditions of 800V, 3A, 82 Ohm, and 15V. Manufactured by Infineon Technologies, this IGBT is housed in a PG-TO247-3-1 package suitable for through-hole mounting. The IGW03N120H2FKSA1 is commonly deployed in power supplies, industrial motor drives, and renewable energy systems. It operates reliably across a wide temperature range of -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 9.2ns/281ns |
| Switching Energy | 290µJ |
| Test Condition | 800V, 3A, 82Ohm, 15V |
| Gate Charge | 22 nC |
| Current - Collector (Ic) (Max) | 9.6 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 9.9 A |
| Power - Max | 62.5 W |
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