IGQ75N120S7XKSA1
IGBT TRENCH 1200V 154A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TRENCHSTOP™ IGBT IGQ75N120S7XKSA1 is a trench-based insulated gate bipolar transistor designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) rating of 154 A, with a pulsed current capability (Icm) of 225 A. The maximum power dissipation is 630 W. Key switching characteristics include a typical on-state voltage (Vce(on)) of 2 V at 15 V gate-source voltage and 75 A collector current. Switching energy is rated at 5.13 mJ (on) and 3.48 mJ (off), with turn-on and turn-off delays of 38 ns and 190 ns respectively at 25°C, tested under 600 V, 75 A, 2.1 Ohm, and 15 V conditions. The gate charge is 450 nC. Operating temperature ranges from -40°C to 175°C (TJ). This device is housed in a PG-TO247-3-55 package for through-hole mounting. Applications include industrial motor drives and power factor correction.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Supplier Device Package | PG-TO247-3-55 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 38ns/190ns |
| Switching Energy | 5.13mJ (on), 3.48mJ (off) |
| Test Condition | 600V, 75A, 2.1Ohm, 15V |
| Gate Charge | 450 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 154 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 630 W |
| Qualification | - |
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