IGQ120N120S7XKSA1
IGBTManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IGQ120N120S7XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. This discrete IGBT offers exceptional efficiency and robustness, making it suitable for power factor correction, motor control, and inverters. Its advanced trench field-stop technology ensures low switching losses and high power density. The IGQ120N120S7XKSA1 is packaged in a tube for efficient integration into automated manufacturing processes. This component is commonly utilized in industrial automation, renewable energy systems, and automotive applications where reliable and efficient power conversion is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
Request a Quote
Clients Also Buy
IRGBF20F
IGBT FAST 900V 20A TO-220AB
IHW15N120R2
IGBT 1200V 30A 357W TO247-3
IKW30N65ET7XKSA1
IGBT TRENCH FS 650V 30A TO247-3
