IGQ100N120S7XKSA1
IGBT TRENCH 1200V 188A TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TRENCHSTOP™ IGQ100N120S7XKSA1 is a 1200 V Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a trench gate structure, offering low conduction losses with a Vce(on) of 2V at 15V, 100A. The continuous collector current rating is 188 A, with a pulsed capability of 300 A. Maximum power dissipation is 824 W. Key switching characteristics include a gate charge of 610 nC and switching energy of 6.87mJ (on) and 4.71mJ (off) under test conditions of 600V, 100A, 1.6 Ohm, 15V. The device operates within a temperature range of -40°C to 175°C (TJ) and is housed in a PG-TO247-3 through-hole package. This IGBT is suitable for use in industrial automation, power supplies, and motor drives.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 100A |
| Supplier Device Package | PG-TO247-3-55 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 38ns/200ns |
| Switching Energy | 6.87mJ (on), 4.71mJ (off) |
| Test Condition | 600V, 100A, 1.6Ohm, 15V |
| Gate Charge | 610 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 188 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 824 W |
| Qualification | - |
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