IGP03N120H2XKSA1
IGBT 1200V 9.6A 62.5W TO220-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGP03N120H2XKSA1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 9.6 A, with a pulsed capability of 9.9 A. The maximum power dissipation is 62.5 W. Key electrical parameters include a typical gate charge of 22 nC and a low on-state voltage (Vce(on)) of 2.8 V at 15 V gate-emitter voltage and 3 A collector current. Switching characteristics demonstrate a turn-on delay (Td(on)) of 9.2 ns and a turn-off delay (Td(off)) of 281 ns at 25°C, under test conditions of 800 V, 3 A, 82 Ohm, and 15 V. The IGP03N120H2XKSA1 is housed in a standard PG-TO220-3-1 package, suitable for through-hole mounting. Its robust design makes it applicable in industrial motor control and power factor correction circuits. Operating temperature ranges from -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Supplier Device Package | PG-TO220-3-1 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 9.2ns/281ns |
| Switching Energy | 290µJ |
| Test Condition | 800V, 3A, 82Ohm, 15V |
| Gate Charge | 22 nC |
| Current - Collector (Ic) (Max) | 9.6 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 9.9 A |
| Power - Max | 62.5 W |
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