IGD15N65T6ARMA1
IGBT TRENCH FS 650V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IGD15N65T6ARMA1 is a 650V, 30A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This component features a maximum continuous collector current of 30A and a pulsed collector current of 57.5A. The IGBT exhibits a low on-state voltage (Vce(on)) of 1.9V at 15V gate-source voltage and 11.5A collector current, with typical turn-on delay (Td(on)) of 30ns and turn-off delay (Td(off)) of 117ns at 25°C. Its gate charge is 37 nC, and switching energy is rated at 230µJ for turn-on and 110µJ for turn-off under specified test conditions (400V, 11.5A, 47 Ohms, 15V). The device is packaged in a PG-TO252-3 (DPAK) surface mount configuration and operates within a temperature range of -40°C to 175°C. This IGBT is suitable for applications in power factor correction, industrial power supplies, and motor control systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 11.5A |
| Supplier Device Package | PG-TO252-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 30ns/117ns |
| Switching Energy | 230µJ (on), 110µJ (off) |
| Test Condition | 400V, 11.5A, 47Ohm, 15V |
| Gate Charge | 37 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 57.5 A |
| Power - Max | 100 W |
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