IGC70T120T8RQ
IGBT 1200V 75A DIEManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGC70T120T8RQ is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This bare die component offers a collector-emitter breakdown voltage of 1200V and a continuous collector current capability of 75A, with a pulsed current rating (Icm) up to 225A. The IGBT features a low on-state voltage (Vce(on)) of 2.42V at 15V gate-emitter voltage and 75A collector current, ensuring efficient power handling. Its Trench Field Stop technology provides optimized switching performance and reduced energy losses. This device is suitable for demanding power electronics applications across industries such as industrial motor drives, renewable energy systems, and electric vehicle powertrains where robust voltage and current handling are critical. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.42V @ 15V, 75A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 225 A |
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