IGC11T120T8LX1SA1
IGBT 1200V 8A SAWN ON FOILManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGC11T120T8LX1SA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This IGBT offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 8A, with a pulsed collector current capability of 24A. The device features a low on-state voltage (Vce(on)) of 2.07V at 15V gate-emitter voltage and 8A collector current. Engineered with a surface mount die package, it is suitable for demanding thermal management. The TrenchStop™ series IGBT operates across a wide temperature range of -40°C to 175°C (TJ). This component finds application in power factor correction, motor control, and power supply designs within industrial and automotive sectors.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.07V @ 15V, 8A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 24 A |
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