IGC07T120T8LX1SA2
IGBT 1200V 4A SAWN ON FOILManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies TrenchStop™ IGC07T120T8LX1SA2 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This surface mount die offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 4 A, with a pulsed collector current capability of 12 A. The device features a low on-state voltage of 2.02 V at 15 V gate-emitter voltage and 4 A collector current. Operating within a temperature range of -40°C to 175°C (TJ), this IGBT is suitable for demanding power conversion circuits in industries such as industrial motor drives, power supplies, and renewable energy systems. The component is supplied in bulk packaging.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.02V @ 15V, 4A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 12 A |
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