IGB01N120H2ATMA1
IGBT 1200V 3.2A 28W TO263-3-2Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGB01N120H2ATMA1 is a 1200V Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This surface-mount device, packaged in a PG-TO263-3-2 (TO-263AB), offers a continuous collector current of 3.2A and a pulsed collector current of 3.5A. With a maximum power dissipation of 28W and a gate charge of 8.6 nC, it exhibits typical turn-on and turn-off times of 13ns and 370ns, respectively, at 25°C under specified test conditions (800V, 1A, 241 Ohm, 15V). The collector-emitter saturation voltage (Vce(on)) is a maximum of 2.8V at 15V gate-emitter voltage and 1A collector current. This component is suitable for use in power factor correction, motor drives, and industrial power supplies. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 1A |
| Supplier Device Package | PG-TO263-3-2 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 13ns/370ns |
| Switching Energy | 140µJ |
| Test Condition | 800V, 1A, 241Ohm, 15V |
| Gate Charge | 8.6 nC |
| Current - Collector (Ic) (Max) | 3.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 3.5 A |
| Power - Max | 28 W |