IGA03N120H2XKSA1
IGBT 1200V 3A 29W TO220-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGA03N120H2XKSA1 is a 1200 V, 3 A Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This Through Hole component, packaged in a PG-TO220-3-31 configuration, offers a maximum power dissipation of 29 W and a collector current of 3 A, with a pulsed capability of 9 A. Key parameters include a Vce(on) of 2.8 V at 15 V/3 A and a gate charge of 8.6 nC. The typical on-state and off-state switching times are 9.2 ns and 281 ns, respectively, at 25°C, with a switching energy of 290 µJ under test conditions of 800 V, 3 A, 82 Ohm, and 15 V. Operating across a temperature range of -40°C to 150°C (TJ), this IGBT is suitable for power factor correction, induction heating, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Supplier Device Package | PG-TO220-3-31 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 9.2ns/281ns |
| Switching Energy | 290µJ |
| Test Condition | 800V, 3A, 82Ohm, 15V |
| Gate Charge | 8.6 nC |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 9 A |
| Power - Max | 29 W |
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