BUP213
IGBT 1200V 32A 200W TO220Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies BUP213 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. This component features a collector-emitter voltage breakdown of 1200 V and a continuous collector current rating of 32 A, with a pulsed capability of 64 A. Its maximum power dissipation is 200 W. The BUP213 utilizes a standard input type and is housed in a TO-220AB package, facilitating through-hole mounting. Key electrical characteristics include a Vce(on) of 3.2V at 15V Vge and 15A Ic, and switching times of 70ns turn-on and 400ns turn-off at 25°C, under test conditions of 600V, 15A, 82 Ohm, and 15V. The operating temperature range is from -55°C to 150°C (TJ). This device is commonly employed in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 15A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 70ns/400ns |
| Switching Energy | - |
| Test Condition | 600V, 15A, 82Ohm, 15V |
| Current - Collector (Ic) (Max) | 32 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 200 W |
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