BSM300GA160DN13CB7HOSA1
BSM300GA160 - INSULATED GATE BIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies BSM300GA160DN13CB7HOSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. This component, part of Infineon's robust power module portfolio, features advanced trench field-stop technology for superior switching characteristics and low conduction losses. Its robust construction and high power density make it ideal for use in industrial motor drives, electric vehicle powertrains, and renewable energy systems such as solar inverters. The BSM300GA160DN13CB7HOSA1 is supplied in bulk packaging, ensuring efficient integration into high-volume manufacturing processes. This IGBT offers exceptional reliability and thermal performance, meeting the stringent requirements of modern power conversion designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
Request a Quote
Clients Also Buy
AUIRGS4062D1
IGBT 600V 59A 246W D2PAK
IGW50N60TPXKSA1
IGBT TRENCH/FS 600V 80A TO247-3
IKZ75N65EL5XKSA1
IGBT 650V 100A TO247-4
