AUIRGP66524D0
IGBT 600V 60A 214W TO-247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies AUIRGP66524D0 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 60 A, with a pulsed capability of 72 A. The Vce(on) is specified at a maximum of 1.9 V at 15 V gate-emitter voltage and 24 A collector current. With a maximum power dissipation of 214 W, it is suitable for power factor correction, motor control, and industrial power supply applications. The device offers a gate charge of 80 nC and exhibits switching energies of 915 µJ (on) and 280 µJ (off) under test conditions of 400 V, 24 A, 10 Ohm, and 15 V. The AUIRGP66524D0 is packaged in a TO-247AC through-hole configuration for ease of mounting and supports an operating temperature range from -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 176 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 24A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/75ns |
| Switching Energy | 915µJ (on), 280µJ (off) |
| Test Condition | 400V, 24A, 10Ohm, 15V |
| Gate Charge | 80 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 72 A |
| Power - Max | 214 W |
Request a Quote
Clients Also Buy
IRGBF20F
IGBT FAST 900V 20A TO-220AB
IHW15N120R2
IGBT 1200V 30A 357W TO247-3
IKW30N65ET7XKSA1
IGBT TRENCH FS 650V 30A TO247-3
