AUIRGF66524D0
IGBT 600V 60A 214W TO-247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies AUIRGF66524D0 is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 214W. This through-hole component, packaged in a TO-247-3 (TO-247AD) case, features a collector current of 60A and a pulsed collector current of 72A. The gate charge is specified at 80 nC. Key electrical parameters include a Vce(on) of 1.9V at 15V gate-emitter voltage and 24A collector current, with switching times (Td) of 30ns turn-on and 75ns turn-off at 25°C under test conditions of 400V, 24A, 10 Ohm, and 15V. The reverse recovery time (trr) is 176 ns, and switching energy is 915µJ (on) and 280µJ (off). The operating temperature range is -55°C to 175°C (TJ). This device is suitable for high-power switching applications in industries such as industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 176 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 24A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/75ns |
| Switching Energy | 915µJ (on), 280µJ (off) |
| Test Condition | 400V, 24A, 10Ohm, 15V |
| Gate Charge | 80 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 72 A |
| Power - Max | 214 W |
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