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AUIRGDC0250AKMA1

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AUIRGDC0250AKMA1

IGBT 1200V 141A 543W SUPER220

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies AUIRGDC0250AKMA1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 141A, with a pulsed current rating of 99A. The Vce(on) is specified at 1.8V maximum at 15V gate-emitter voltage and 33A collector current, under test conditions of 600V and 33A. With a maximum power dissipation of 543W and a switching energy of 15mJ (off), this IGBT is suitable for demanding applications. It has a standard input type and a gate charge of 151 nC. The AUIRGDC0250AKMA1 is housed in a SUPER-220™ (TO-273AA) package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is utilized in industries such as industrial automation and power supply design.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-273AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 33A
Supplier Device PackageSUPER-220™ (TO-273AA)
IGBT Type-
Td (on/off) @ 25°C-/485ns
Switching Energy15mJ (off)
Test Condition600V, 33A, 5Ohm, 15V
Gate Charge151 nC
Current - Collector (Ic) (Max)141 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)99 A
Power - Max543 W

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