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AUIRGDC0250

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AUIRGDC0250

IGBT 1200V 141A 543W TO-220

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies AUIRGDC0250 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a maximum collector-emitter voltage (Vce) of 1200V and a continuous collector current (Ic) of 141A, with a pulsed current (Icm) capability of 99A. The device offers a maximum power dissipation of 543W and a low on-state voltage (Vce(on)) of 1.57V at 15V gate-emitter voltage and 33A collector current. With a gate charge of 227 nC, it provides efficient switching characteristics. The AUIRGDC0250 is housed in a TO-220-3 package, specifically the SUPER-220™ (TO-273AA) through-hole mounting variant. Its operating temperature range is from -55°C to 150°C (TJ). This IGBT is suitable for use in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.57V @ 15V, 33A
Supplier Device PackageSUPER-220™ (TO-273AA)
IGBT Type-
Td (on/off) @ 25°C-/485ns
Switching Energy15mJ (off)
Test Condition600V, 33A, 5Ohm, 15V
Gate Charge227 nC
Current - Collector (Ic) (Max)141 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)99 A
Power - Max543 W

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