AUIRG4PH50S-205
IGBT 1200V TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies AUIRG4PH50S-205 is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding power electronics applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 141 A, with a pulsed capability of 99 A. The device boasts a maximum power dissipation of 543 W and a low on-state voltage of 1.7 V at 15 V gate-emitter voltage and 33 A collector current. Its standard input type and efficient switching characteristics, with a turn-off switching energy of 16 mJ, make it suitable for applications requiring robust performance. The AUIRG4PH50S-205 is housed in a TO-247AC package, facilitating through-hole mounting. Operating across a wide temperature range from -55°C to 150°C, this Infineon Technologies IGBT is a reliable choice for motor drives, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 33A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/616ns |
| Switching Energy | 16mJ (off) |
| Test Condition | 600V, 33A, 5Ohm, 15V |
| Gate Charge | 227 nC |
| Current - Collector (Ic) (Max) | 141 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 99 A |
| Power - Max | 543 W |
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