AUIRG4PH50S
IGBT 1200V 141A TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies AUIRG4PH50S is a robust Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 141A at 25°C, with a pulsed capability of 99A. Its high power dissipation of 543W, coupled with a low on-state voltage of 1.7V at 15V gate-emitter voltage and 33A collector current, ensures efficient operation. The AUIRG4PH50S has a typical switching energy of 16mJ (off) under specified test conditions (600V, 33A, 5 Ohm, 15V). With a gate charge of 227 nC and a turn-off delay of 616ns, it is suitable for high-frequency switching. This automotive-grade IGBT is housed in a TO-247-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Its AEC-Q101 qualification makes it a reliable choice for automotive power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 33A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/616ns |
| Switching Energy | 16mJ (off) |
| Test Condition | 600V, 33A, 5Ohm, 15V |
| Gate Charge | 227 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 141 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 99 A |
| Power - Max | 543 W |
| Qualification | AEC-Q101 |
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