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AIKBE50N65RF5ATMA1

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AIKBE50N65RF5ATMA1

IGBT TRENCH FS 650V 96A TO263-7

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies CoolSiC™ AIKBE50N65RF5ATMA1 is a Trench Field Stop IGBT designed for high-performance applications. This automotive-grade component features a 650 V collector-emitter breakdown voltage and a continuous collector current of 96 A, with a pulsed capability of 150 A. Optimized for efficiency, it offers low switching energies of 120 µJ on and 90 µJ off, with typical switching times of 16.8 ns (on) and 136 ns (off) at 25°C. The IGBT exhibits a maximum on-state voltage of 2.1 V at 15 V gate-emitter voltage and 50 A collector current. Its high thermal performance is supported by a maximum power dissipation of 326 W and an operating temperature range of -40°C to 175°C. Packaged in a PG-TO263-7-U04 (TO-263-8, D2PAK) surface-mount package and supplied on tape and reel, this device is suitable for demanding automotive power systems.

Additional Information

Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Supplier Device PackagePG-TO263-7-U04
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C16.8ns/136ns
Switching Energy120µJ (on), 90µJ (off)
Test Condition400V, 25A, 9Ohm, 15V
Gate Charge108 nC
GradeAutomotive
Current - Collector (Ic) (Max)96 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)150 A
Power - Max326 W
QualificationAEC-Q101

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