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AIHD03N60RFATMA1

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AIHD03N60RFATMA1

IC DISCRETE 600V TO252-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies AIHD03N60RFATMA1 is a Trench Field Stop IGBT with a 600 V collector-emitter breakdown voltage. This device is designed for surface mount applications within a PG-TO252-3-313 package. It offers a continuous collector current of 5 A and a pulsed collector current of 7.5 A, with a maximum power dissipation of 53.6 W. The IGBT exhibits a typical on-state voltage of 2.5V at 15V gate-emitter voltage and 2.5A collector current. Switching characteristics include a gate charge of 17.1 nC and switching energy ratings of 50µJ (on) and 40µJ (off) under test conditions of 400V, 2.5A, 68 Ohm, and 15V. The operating temperature range is -40°C to 175°C. This component is commonly utilized in power factor correction, uninterruptible power supplies, and industrial motor control applications. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 2.5A
Supplier Device PackagePG-TO252-3-313
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C10ns/128ns
Switching Energy50µJ (on), 40µJ (off)
Test Condition400V, 2.5A, 68Ohm, 15V
Gate Charge17.1 nC
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)7.5 A
Power - Max53.6 W

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