SPW52N50C3FKSA1
MOSFET N-CH 560V 52A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPW52N50C3FKSA1 is a N-Channel Power MOSFET from the CoolMOS™ series. This component features a Drain to Source Voltage (Vdss) of 560 V and a continuous drain current (Id) of 52A at 25°C (Tc). The maximum power dissipation is 417W (Tc). With a low on-resistance (Rds On) of 70mOhm at 30A and 10V, this device is suitable for applications requiring high efficiency. Key parameters include a gate charge (Qg) of 290 nC @ 10 V and input capacitance (Ciss) of 6800 pF @ 25 V. The MOSFET is packaged in a PG-TO247-3-1 through-hole mount. Operating temperature ranges from -55°C to 150°C (TJ). This robust component is utilized in power supply, motor control, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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