SPW21N50C3FKSA1
MOSFET N-CH 560V 21A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPW21N50C3FKSA1 is a high-performance N-channel Power MOSFET with a drain-source breakdown voltage of 560V. This device offers a continuous drain current of 21A at 25°C (Tc) and a maximum power dissipation of 208W (Tc). Featuring a low on-resistance of 190mOhm at 13.1A and 10V, the SPW21N50C3FKSA1 is designed for efficient operation. Key parameters include a gate charge (Qg) of 95 nC at 10V and an input capacitance (Ciss) of 2400 pF at 25V. The MOSFET is housed in a PG-TO247-3-1 package with a through-hole mounting type. This component is suitable for applications in power factor correction, switch mode power supplies, and high voltage DC-DC converters. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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