SPW20N60S5FKSA1
MOSFET N-CH 600V 20A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPW20N60S5FKSA1 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device offers a continuous drain current of 20A at 25°C (Tc) and a maximum power dissipation of 208W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 190mOhm at 13A, 10V, and a gate charge (Qg) of 103 nC at 10V. The input capacitance (Ciss) is specified at 3000 pF at 25V. This through-hole component is housed in a PG-TO247-3 package, facilitating robust thermal management. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is 5.5V at 1mA. This component is commonly utilized in switch mode power supplies, industrial power, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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