SPW20N60CFDFKSA1
MOSFET N-CH 650V 20.7A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPW20N60CFDFKSA1 is a 650V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current of 20.7A at 25°C (Tc) and a maximum power dissipation of 208W (Tc). With a low on-resistance of 220mOhm at 13.1A and 10V, it minimizes conduction losses. The gate charge (Qg) is 124 nC at 10V, and input capacitance (Ciss) is 2400 pF at 25V, facilitating efficient switching performance. Supplied in a PG-TO247-3-1 package for through-hole mounting, this MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). Its robust design makes it suitable for demanding applications in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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