SPW15N60CFDFKSA1
MOSFET N-CH 650V 13.4A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' SPW15N60CFDFKSA1 is a 650 V N-Channel CoolMOS™ Power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance of 330 mOhm maximum at 9.4A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current of 13.4A at 25°C and a maximum power dissipation of 156W, it is suitable for demanding power supply designs. The MOSFET offers a gate charge (Qg) of 84 nC at 10V and an input capacitance (Ciss) of 1820 pF at 25V, facilitating efficient switching performance. Packaged in a PG-TO247-3-1 through-hole configuration, the SPW15N60CFDFKSA1 operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in switch mode power supplies, server power, and industrial applications where reliability and performance are critical.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 750µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
