SPW11N60CFDFKSA1
MOSFET N-CH 650V 11A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPW11N60CFDFKSA1 is a 650V N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 11A at 25°C and a maximum power dissipation of 125W (Tc). The device offers a low Rds(on) of 440mOhm at 7A, 10V, contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 64 nC (max) at 10V and input capacitance (Ciss) of 1200 pF (max) at 25V, facilitating efficient switching performance. The SPW11N60CFDFKSA1 is housed in a PG-TO247-3-1 package, suitable for through-hole mounting and operating within a temperature range of -55°C to 150°C (TJ). This device is commonly utilized in power supply units, server applications, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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