SPW11N60C3FKSA1
MOSFET N-CH 650V 11A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPW11N60C3FKSA1, offers a 650V drain-source voltage and a continuous drain current of 11A at 25°C (Tc). This device features a maximum on-resistance of 380mOhm at 7A and 10V gate-source voltage, with a gate charge of 60 nC at 10V. Its input capacitance (Ciss) is 1200 pF at 25V. The SPW11N60C3FKSA1 is packaged in a PG-TO247-3-1 (TO-247-3) through-hole mount. With a maximum power dissipation of 125W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 500µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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